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粉體行業在線展覽
MPCVD設備
直接聯系
山東力冠微電子裝備有限公司
山東
面議
山東力冠
MPCVD設備
291
產品概述/Product Introduction：
? 微波等離子化學氣相沉積技術(MPCVD) , 通過等離子增加前驅體的反應速率,降低反應溫度。適合制備面積大、均勻性好、純度高、結晶形態好的高質量的金剛石單晶和多晶薄膜
Microwave plasma chemical vapor deposition (MPCVD), which increases the reaction rate of precur-sors and reduces the reaction temperature by plasma. It is suitable for preparing diamond single crystal and polycrystalline films with large area, good uniformity, high purity and good crystal morphology
技術指標/Technical Indicators：
測溫: 300-1500°C Temperature measurement: 300-1500°C | 極限真空: 5*10E-4Pa Limit vacuum: 5*10E-4Pa |
氣路系統: 6路 Gas path system: 6 channels | 壓力范圍: 5-300Torr Pressure range: 5-300Torr |
微波功率: 0.5-15Kw連續可調 Microwave power: 0.5-15Kw continuously adjustable | 功率穩定性: <2% Power stability: < 2% |
波紋:≤1% Ripple:≤1% | 微波頻率: 2450MHz士50MHz Microwave frequency: 2450MHz土50MHz |
微波泄露值: <5Mw/cm2 Microwave leakage value: < 5Mw/cm2 | 放電區域:≥100mm Discharge area:≥100mm |
沉積區域:≥80mm Sedimentation area:≥80 mm | 生長速率: >12um Growth rate: > 12um |
