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產(chǎn)品概述/Product Introduction：

? LPCVD設(shè)備是半導(dǎo)體集成電路制造的重要設(shè)備之一， 主要用于多晶硅、氮化硅、氧化硅薄膜的生長(zhǎng),它是將原材料氣體(或者液態(tài)源氣化)用熱能激活發(fā)生化學(xué)反應(yīng)而在基片表面生成固體薄膜。LPCVD過(guò)程是在低壓下進(jìn)行的，由于氣壓低，氣體分子平均自由程大，使生長(zhǎng)的薄膜均勻性好，此外基片可以豎放使得設(shè)備裝片量大，特別適用于工業(yè)化生產(chǎn)

LPCVD equipment is one of the important equipments for semiconductor integrated circuit manufacturing, which is mainly used for the growth of polysilicon, silicon nitride and silicon oxide thin films. It activates raw material gas (or liquid source gasification) with heat energy to generate solid thin films on the substrate surface. LPCVD process is carried out under low pressure. Because of low pressure and large average free path of gas molecules, the uniformity of the grown film is good. The substrate can be placed vertically, which makes the equipment load large, especially suitable for industrial production.

? 立式LPCVD采用鐘罩式結(jié)構(gòu)，設(shè)計(jì)嵌套腔體機(jī)械手傳片組件、舟旋轉(zhuǎn)組件,具有占地面積小成膜均勻性高、工藝穩(wěn)定性高等優(yōu)點(diǎn)。主要用于二氧化硅、摻雜多晶硅、氮化硅膜層的制備工藝

Vertical LPCVD adopts bell jar structure, and designs nested cavity manipulator film transmission assembly and boat rotation assembly, which has the advantages of small occupied area, high film formation uniformity and high process stability. It is mainly used for preparing silicon dioxide, doped polysilicon and silicon nitride films.