粉體行業在線展覽
晶體提拉設備
面議
山東力冠
晶體提拉設備
321
產品概述/Product Introduction:
? 直拉法晶體生長專用設備,可實現在高壓、真空和保護氣氛下直拉生長晶體
Special equipment for Czochralski crystal growth, which can realize Czochralski crystal growth under high pressure, vacuum and protective atmosphere
? 采用自動稱重結構,在保證晶體品質的前提下實現了直拉晶體的自動生長過程
Adopting automatic weighing structure, the automatic growth process of Czochralski crystal is realized on the premise of ensuring crystal quality
產品特點/Product Characteristics:
? 高精度的傳感器和控制軟件
High precision sensor and control software
? 自動控制晶體外形
Automatic control of crystal shape
? **溫度:2400℃
Maximum temperature: 2400℃
? 晶體尺寸:2-8英寸
crystal size: 2-8 inches
應用范圍/Scope:
? 應用于氧化家(Ga?O?)單晶生長,SiC單晶、激光單晶生長
Applied to Gallium Oxide(Ga?O?)Single Crystal Growth, SiC Single Crystal Growth and Laser SingleCrystal Growth