粉體行業在線展覽
PVT單晶生長設備
面議
山東力冠
PVT單晶生長設備
298
產品特點/Product characteristics:
? 提供兩種工藝包
Two process packages are provided
①外形包:產出6英寸碳化硅(SiC) 單晶,外形不開裂
Shape package: 6-inch silicon carbide (SiC) single crystal is produced without cracking
②工藝包:晶型: 4H
Process package: Crystal form: 4H
電阻率:0.015~0.025ohm.cm
Resistivity: 0.015 ~ 0.025 ohm . cm
直徑:150.25士0.25mm
Diameter: 150.25士0.25 mm
厚度:≥10 (Figure 2) mm
Thickness:≥10 (Figure 2) mm
微管密度:≤3ea/cm2
Microtubule density:≤3 ea/cm2
TSD:≤1000ea/cm2
? 溫度**可達2400°C
Temperatures up to 2400°C