粉體行業在線展覽
粉體行業在線展覽
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上海尖豐光電技術有限公司
德國
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SAM半導體可飽和吸收鏡 1064nm (Saturable Absorber Mirror 1064 nm)
品牌:BATOP
型號:SAM-1064
關鍵詞:半導體可飽和吸收鏡， 可飽和吸收耦合輸出鏡， 共振可飽和吸收鏡， 可飽和噪聲去除腔， 可飽和吸收體
BATOP 現已成為用于被動鎖模激光器的可飽和吸收體的****供應商。可飽和吸收產品集合了各式各樣的不同的器件，從可飽和吸收鏡(SESAM)，到可飽和輸出鏡(SOC)和用于透過應用的可飽和吸收體(SA)。迄今為止，可飽和吸收產品已經覆蓋了800nm到2.6μm的常用激光波長范圍。
SAM product list
Wavelength region 790 nm-830 nm: 800 nm
Wavelength region 910 nm-990 nm: 940 nm | 980 nm
Wavelength region 1020 nm-1150 nm: 1040 nm | 1064 nm | 1100 nm
Wavelength region 1110 nm-1320 nm: 1150 nm | 1300 nm
Wavelength region 1320 nm-1460 nm: 1340 nm | 1420 nm
Wavelength region 1470 nm-1660 nm: 1510 nm | 1550 nm | 1645 nm
Wavelength region 1900 nm-3200 nm: 2000 nm | 2150 nm | 2400 nm | 3000 nm
SAM 1064 | |
laser wavelength | λ = 1064 nm |
high reflection band (R>99%) | λ = 1020 .. 1110 nm |
absorption | A0 = 0.5 - 70 % |
relaxation time | τ ~ 500 fs - 27 ps |
型號參數：
Part No. help | Delivery time | Description |
SAM-1064-0.7-1ps-x | 1 week | SAM: λ = 1064 nm， absorptance 0.7 %， Δ R = 0.4 %， τ ~ 1 ps |
SAM-1064-1-1ps-x | 1 week | SAM: λ = 1064 nm， absorptance 1 %， Δ R = 0.6 %， τ ~ 1 ps |
SAM-1064-1.5-1ps-x | 1 week | SAM: λ = 1064 nm， absorptance 1.5 %， Δ R = 0.8 %， τ ~ 1 ps |
SAM-1064-2-1ps-x | 1 week | SAM: λ = 1064 nm， absorptance 2 %， Δ R = 1.2 %， τ ~ 1 ps |
SAM-1064-3-1ps-x | 1 week | SAM: λ = 1064 nm， absorptance 3 %， Δ R = 1.6 %， τ ~ 1 ps |
SAM-1064-3.5-1ps-x | 1 week | SAM: λ = 1064 nm， absorptance 3.5 %， Δ R = 2 %， τ ~ 1 ps |
SAM-1064-4-1ps-x | 1 week | SAM: λ = 1064 nm， absorptance 4 %， Δ R = 2.4 %， τ ~ 1 ps |
SAM-1064-5-1ps-x | 1 week | SAM: λ = 1064 nm， absorptance 5 %， Δ R = 3 %， τ ~ 1 ps |
SAM-1064-6-1ps-x | 1 week | SAM: λ = 1064 nm， absorptance 6 %， Δ R = 3.5 %， τ ~ 1 ps |
SAM-1064-8-500fs-x | 1 week | SAM: λ = 1064 nm， absorptance 8 %， Δ R = 5 % |
SAM-1064-10-1ps-x | 1 week | SAM: λ = 1064 nm， absorptance 10 %， Δ R = 6 %， τ ~ 1 ps |
SAM-1064-13-500fs-x | 1 week | SAM: λ = 1064 nm， absorptance 13 %， Δ R = 8 % |
SAM-1064-18-500fs-x | 1 week | SAM: λ = 1064 nm， absorptance 18 %， Δ R = 10 %， τ ~ 500 fs， antiresonant multi quantum well structure， |
SAM-1064-23-1ps-x | 1 week | SAM: λ = 1064 nm， absorptance 28 %， Δ R = 15 %， τ ~ 1 ps， antiresonant multi quantum well structure， |
SAM-1064-26-1ps-x | 1 week | SAM: λ = 1064 nm， absorptance 28 %， Δ R = 13 %， τ ~ 1 ps， resonant multi quantum well structure， |
SAM-1064-38-1ps-x | 1 week | SAM: λ = 1064 nm， absorptance 38 %， Δ R = 23 %， τ ~ 1 ps， antiresonant multi quantum well structure， |
SAM-1064-70-500fs-x | 1 week | SAM: λ = 1064 nm， absorptance 70 %， Δ R = 40 %， τ ~ 500 fs |
