粉體行業在線展覽
聲學級鈮酸鋰晶體
面議
上海光學
聲學級鈮酸鋰晶體
81
鈮酸鋰(LN)晶體具有優良的壓電、電光、聲光、非線性等性能。在民用領域有著廣泛的用途,隨著光電技術的發展, LN晶體還是較好的壓電晶體,能用于制作中低頻SAW濾波器,大功率耐高溫的超聲換能器等。
項目 | 名 稱 | 規 格 |
1 | 鈮酸鋰基片和晶體 | Φ2″Y軸Z軸X軸 |
2 | 鈮酸鋰基片和晶體 | Φ2″64°Y-X |
3 | 鈮酸鋰基片和晶體 | Φ2″128°Y-X |
4 | 鈮酸鋰基片和晶體 | Φ3″Y軸Z軸 |
5 | 鈮酸鋰基片和晶體 | Φ3″64°Y-X |
6 | 鈮酸鋰基片和晶體 | Φ3″128°Y-X |
7 | 鈮酸鋰基片和晶體 | Φ4″Y軸Z軸 |
8 | 鈮酸鋰基片和晶體 | Φ4″64°Y-X |
9 | 鈮酸鋰基片和晶體 | Φ4″128°Y-X |
基本性質(Basic Properties)
晶體結構 Crystal Structure | Trigonal, point group3m |
晶格常數 Lattice Parameters | a=5.148, c=13.863 |
密度 Density | 4.64g/cm3 |
熔點 Melting Point | 1250℃ |
居里溫度 Curie Point | 1142±2℃ |
硬度 Mohs Hardness | 5 |
介電常數 Dielectric Constant | ε11/ε0=85; ε33/ε0=29.5 |
電阻系數Thermal Conductivity | 38W/m/℃at25℃ |
熱膨脹系數 Thermal Expansion Coefficient | a1=a2=2×10-6/℃, a3=2.2×10-6/℃at25℃ |
壓電常數 Piezoelectric Strain Constant | d22=2.04×10-11C/N,d33=0.6×10-11C/N,d15=7X10-11C/N,d31=-0.1X10-11C/N |
Elastic Stiffness Constant | C11E=2.04×1011N/m2,C33E=2.46×1011N/m2, |
聲表面波級鈮酸鋰晶片(SAW Grade LiNbO3Wafer)
軸向 Orientation | 64°rot.Y-cut ± 0.2° | 127.86°rot.Y-cut ± 0.2° | Y-cut ± 0.2° |
直徑 Diameter | 76.2mm±0.3mm 100.0mm±0.3mm | 76.2mm±0.3mm 100.0mm±0.3mm | 76.2mm±0.3mm 100.0mm±0.3mm |
基準面 Orientation Flat (OF) | 22mm±2mm 22mm±2mm Perpendicular to X ± 0.2° | 22mm±2mm 22mm±2mm Perpendicular to X ± 0.2° | 22mm±2mm 22mm±2mm Perpendicular to X ± 0.2° |
第二參考面 Second Refer. Flat (RF) | 10mm±3mm Cw180° ± 0.5° from OF | 10mm±3mm Cw225° ± 0.5° from OF | 10mm±3mm Cw270° ± 0.5° from OF |
厚度 Thickness | 500um ± 20um 350um ± 20um | 500um ± 20um 350um ± 20um | 500um ± 20um 350um ± 20um |
傳播表面 Propagating surface | “+” side Ra ≤ 8 | “+” side Ra ≤ 8 | “+” side Ra ≤ 8 |
晶片背面 Wafer backside | GC#1000lapped & etched 0.2um≤Ra≤0.7um | GC#1000lapped & etched 0.2um≤Ra≤0.7um | GC#1000lapped & etched 0.2um≤Ra≤0.7um |
TTV | ≤ 10um | ||
LTV | ≤ 2.0um within an area of5×5mm2 | ||
PLTV | ≥ 95% (3mmfrom edge excluded) | ||
BOW | -25um ≤ Bow ≤ +25um | ||
居里溫度 Curie Temperature | 1142℃±3℃(DTA method) | ||
邊緣倒角Edge Beveling | Edge rounding |