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面議
1307
RKD Elite Etch蝕刻酸解封裝置集成了許多的工程創(chuàng)新。采用優(yōu)質(zhì)級(jí)碳化硅加工的整體式蝕刻頭組件具有優(yōu)異的耐酸性,再加上活性氮?dú)怏w監(jiān)測(cè)和凈化系統(tǒng)這一整體的設(shè)計(jì),降低了開(kāi)封完成后殘留在蝕刻頭上酸的冒煙情況。選擇單片碳化硅也可以縮短升溫時(shí)間。
蝕刻頭使用低熱質(zhì)量的設(shè)計(jì)。其他制造商使用高熱質(zhì)量設(shè)計(jì)和復(fù)雜可互換的組件如可移動(dòng)的蝕刻頭插入,具有不可靠的性能特點(diǎn)。我們簡(jiǎn)單但有效的設(shè)計(jì)大大減少了蝕刻頭的清洗和周?chē)氯那闆r。
設(shè)備限制鼻壓頭是手動(dòng)下壓,是專(zhuān)為大量的使用所設(shè)計(jì)。鼻壓頭通常縮回,只在安全蓋完全關(guān)閉后延伸。RAM的鼻子垂直運(yùn)動(dòng)的固定裝置的蝕刻頭從而消除或包或夾具的運(yùn)動(dòng)。
The Elite Etch Cu ESD 7200 model incorporates critical ESD protection circuitry, thereby eliminating the potential for incremental ESD damage to fragile packages during decapsulation. In traditional non-conductive PTFE, a charge may build up on the inner surface of the acid line tubing and any residual electrical charge cannot be neutralized. If the charge exceeds the dielectric strength of the PTFE, dielectric breakdown occurs. ESD hazards associated with PTFE are eliminated in this system by the use of electrically dissipative PTFE.
The Elite Etch Cu ESD 7200 is equipped with a conductive ram nose connected to a high impedance resistor network to aid in ESD mitigation during decapsulation. The plastic encapsulated IC itself is of particular concern to justify working with a static-free environment. The solution is an electrically isolated yet dissipative ram nose assembly combined with the electrically functional PTFE. These components ensure that the process of decapsulation eliminates all ESD risks within the part being opened. The system is equipped with two ESD panel mounted sockets and circuitry for the attachment of ESD tweezers and a wrist strap. The wrist strap can be worn to mitigate ESD problems when handling a decapsulated package- including removal of the part from the decapsulator, rinsing, or drying.
Etcher Unit | Height: 300 mm (13 in) |
---|---|
Width: 190 mm (7.5 in) | |
Depth: 305 mm (12 in) | |
Bottle Assembly | Height: 254 mm (10 in) |
Width: 280 mm (11 in) | |
Depth: 127 mm (5 in) | |
Weight | Approx. 16 kg (35 lb) |
Power Source | 90 to 250 VAC, 50 to 60 Hz (4 amp) |
Acid temp. range | 10° to 250° C |
Acid temp. set point | 1° C ± 1% of setting |
Etch cavity (up to) | 22 mm x 22 mm (30 mm diagonal) |
Choice of Acids | fuming nitric acids, mixed fuming nitric and sulfuric acids, or fuming/concentrated sulfuric acid |
Acid Mix Ratios | (nitric to sulfuric ratios) 9:1, 6:1, 5:1, 4:1, 7:2, 3:1, 5:2, 2:1, 3:2, 1:1, 1:2, 1:3, 1:4, 1:5 |
Post Etch Rinse Options | sulfuric acids, fuming nitric acids, mixed acids, or no rinse |
Etch Times | 1 to 2,400 seconds in 1 second increments (1 seconds to 40 minutes) dynamic (real time) adjustments of etch time |
Etchant Volume Selection | 1 to 8 ml per minute - for all acids & acid mixes |
Etch Delivery Functions | pulsed or Reciprocal Etch Acid Pulse (REAP) for lower acid consumption |
Operator Program Storage | 100 programs stored to nonvolatile memory |
Ambient Temperature Range | 15° to 26° C |
Ambient Humidity | 0 to 70% non-condensing |
Warranty | most comprehensive and inclusive warranty in industry (ask for full details) |
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